On the growth of 4H–SiC by low-temperature liquid phase epitaxy in Al rich Al–Si melts-Reference-Cited by-同舟云学术

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On the growth of 4H–SiC by low-temperature liquid phase epitaxy in Al rich Al–Si melts

Published:2003-06 Issue:1-2 Volume:254 Page:123-130
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jacquier Christophe,Ferro Gabriel,Cauwet François,Viala Jean Claude,Younes Ghassan,Monteil Yves

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

2. Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing

3. Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

4. Phase equilibria in the Al-Si-C system

5. High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy

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1. Vapor-liquid-solid-like growth of thin film SiC by nanoscale alternating deposition of SiC and NiSi2;Applied Surface Science;2020-11

2. The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC;Japanese Journal of Applied Physics;2020-02-01

3. Estimation of C Solubility at SiC Saturation from the Reaction of Carbon Crucible with Si-Cr Solvent for Top-Seeded Solution Growth;Acta Physica Polonica A;2019-05

4. In Situ Interface Observation of 3C-SiC Nucleation on Basal Planes of 4H-SiC During Solution Growth of SiC from Molten Fe-Si Alloy;JOM;2018-05-17

5. Preferred orientation and interfacial structure in extruded nano-Al3BC/6061 Al;Materials & Design;2017-10

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