Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Electronic structure of InAs/GaAs self-assembled quantum dots
3. Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
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1. Structural and optical characteristics of ∼ 1.65 μm-emitting quantum dots on InP substrate grown by selected area-MOVPE;Journal of Crystal Growth;2024-02
2. Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties;Crystals;2023-09-08
3. Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening;ST PETER POLY U J-PH;2023
4. Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques;2022 International Conference on Electrical Engineering and Photonics (EExPolytech);2022-10-20
5. Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots;Journal of Applied Physics;2022-06-21
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