Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding-Reference-Cited by-同舟云学术

Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding

Published:2000-03 Issue:1-3 Volume:210 Page:351-355
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vainer B.G,Kamaev G.N,Kurishev G.L

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Analysis of Wafer Bonding by Infrared Transmission

2. Low‐Temperature Preparation of Silicon/Silicon Interfaces by the Silicon‐to‐Silicon Direct Bonding Method

3. N.I. Kaliteevsky, Wave Optics, The Higher School, Moscow, 1978 (Chapter 5) (in Russian).

4. Q.-Y. Tong, S. Krasnicki, U. Gösele, Proceedings of the Third International Symposium on Semiconductor Wafer Bonding, Physics and Applications, Vol. 95–7, The Electrochemical Society, Pennington, 1995, p. 155.

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