Studies of Defect Detection and Thermal Influence in Semi-Insulating 6H-SiC Substrates Using a Long-Wavelength Infrared Thermal Imaging Camera
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=8/a=085501/pdf
Reference18 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. 0.25 $\mu\hbox{m}$ Self-Aligned AlGaN/GaN High Electron Mobility Transistors
3. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors
4. Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique
5. Grain refinement in as cast Al–Mg–Mn alloy during high temperature equal channel angular pressing
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