Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. M. Razeghi, The MOCVD Challenge, Vol. 1: A Survey of GaInAs-InP for Photonic and Electronic Applications, Adam Hilger, Philadelphia, 1989.
2. GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 μm lasers
3. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
4. Yellow—Green In1-xGaxP and In1-xGaxP1-zAszLED's and electron-beam-pumped lasers prepared by LPE and VPE
5. Gas-source molecular beam epitaxy of lattice-matched GaxIn1−xAsyP1−y on GaAs over the entire composition range
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1. Growth of GaAsP by Solid Source Molecular Beam Epitaxy;Key Engineering Materials;2012-12
2. Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy;Transactions of Nonferrous Metals Society of China;2011-01
3. Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source;Chinese Physics Letters;2005-03-23
4. Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy;Advanced Microelectronic Processing Techniques;2000-10-24
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