Gas-source molecular beam epitaxy of lattice-matched GaxIn1−xAsyP1−y on GaAs over the entire composition range
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Yellow—Green In1-xGaxP and In1-xGaxP1-zAszLED's and electron-beam-pumped lasers prepared by LPE and VPE
2. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
3. Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers
4. Aluminium-free GaAs/GaInAsP quantum well lasers
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1. Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source;Chinese Physics Letters;2005-03-23
2. MOCVD growth of asymmetric 980nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications;Journal of Crystal Growth;2003-02
3. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
4. Chapter 2 Gallium arsenide heterostructures;Processing and Properties of Compound Semiconductors;2001
5. Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell;Journal of Crystal Growth;2000-03
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