Effects of morphology on photoemission oscillation measurements during growth of resonant tunneling devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
2. Photoemission oscillation measurement of barrier thickness for InAs/AlSb resonant tunneling diodes
3. Photoemission oscillations as an in situ monitor of layer thickness with monolayer resolution
4. Hole and interband resonant tunneling in GaAs/GaAlAs and InAs/GaSb/AlSb tunnel structures
5. Measurement of photoemission oscillations during molecular beam epitaxial growth of (001) GaAs, AlAs, AlGaAs, InAs, and AlSb
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1. A Monte Carlo investigation of growth and characterization of heteroepitaxial thin films;Thin Solid Films;2009-10
2. Growth oscillation decay rates for control of III–V molecular beam epitaxy near stoichiometry;Applied Physics Letters;2000-05-22
3. Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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