Growth oscillation decay rates for control of III–V molecular beam epitaxy near stoichiometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126582
Reference21 articles.
1. Interface roughness and polar optical phonon scattering in RTDs
2. Interface roughness effects in resonant tunneling structures
3. Correlation between atomic-scale structure and mobility anisotropy inInAs/Ga1−xInxSbsuperlattices
4. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
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