Correlation between atomic-scale structure and mobility anisotropy inInAs/Ga1−xInxSbsuperlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.6534/fulltext
Reference27 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
3. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
4. Demonstration of 3.5 µm Ga1-xInxSb/InAs superlattice diode laser
5. Raman scattering study of InAs/GaInSb strained layer superlattices
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2. Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence;Journal of Applied Physics;2014-09-28
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