Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
2. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
3. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
4. Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
5. Pendeoepitaxy of gallium nitride thin films
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