In-situ observation of silicon carbide sublimation growth by X-ray topography-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

In-situ observation of silicon carbide sublimation growth by X-ray topography

Published:2001-01 Issue:3 Volume:222 Page:579-585
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kato Tomohisa,Oyanagi Naoki,Yamaguchi Hirotaka,Nishizawa Shin-ichi,Nasir Khan M,Kitou Yasuo,Arai Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Investigation of growth processes of ingots of silicon carbide single crystals

2. The status of SiC bulk growth from an industrial point of view

3. Formation of macrodefects in SiC

4. Enlargement of SiC Crystals: Defect Formation at the Interfaces

5. Technique for the video display of X-ray topographic images and its application to the study of crystal growth

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC Single Crystal Semiconductors;Silicon Carbide Ceramics;2023

2. Investigation for the Crystal Defects by X-ray Topography;Vacuum and Surface Science;2021-05-10

3. X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera;Japanese Journal of Applied Physics;2021-01-01

4. High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity;Japanese Journal of Applied Physics;2019-05-03

5. Review of SiC crystal growth technology;Semiconductor Science and Technology;2018-09-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3