Nucleation and growth of Ga1−xAlxAs on (111) GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. An improved GaAs transmission photocathode
2. Dependence on Crystalline Face of the Band Bending in Cs2 O‐Activated GaAs
3. Surface irregularities due to spiral growth in LPE layers of AlGaAs and InGaAsP
4. DOUBLE‐HETEROSTRUCTURE INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2
5. Liquid‐phase epitaxial growth of (AlGa)As on polished and roughened GaP substrates for transmission photocathodes
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1. Liquid-phase epitaxial growth of REBa2Cu3O7−δ (RE=Y, Yb, Er) thick films at reduced temperatures;Journal of Crystal Growth;2000-06
2. Thermal degradation of ZnO/InP interfaces: Heteroepitaxial growth of precipitated indium on InP{111} planes;Journal of Applied Physics;1996-12
3. Suppression of twins in GaAs layers grown on a GaP(111)B substrate by liquid phase epitaxy;Journal of Crystal Growth;1996-11
4. LPE growth effects of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.55P0.45 on structured InP substrates;Journal of Crystal Growth;1983-01
5. Liquid Phase Epitaxy;Crystal Growth;1980
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