Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. International Technology Roadmap for Semiconductors, 2001 edition, ITRS homepage, http://www.public.itrs.net.
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4. GaAs microwave MOSFET's
5. A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer
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