Numerical analysis for the growth of GaN layer in MOCVD reactor

Author:

Shin Chang-Yong,Baek Byung-Joon,Lee Cheul-Ro,Pak Bokchoon,Yoon Jeong-Mo,Park Keun-Seop

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

2. R.L. Mahajan, Advances in Heat Transfer, Academic Press, New York, 1996, p. 28.

3. A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

4. W.K.S. Chiu, Y. Jaluria, Heat transfer in horizontal and vertical CVD reactor, HTD-Vol. 347, ASME National Heat Transfer Conference, Vol. 9, ASME, New York, 1997, pp. 293–311.

5. W.K.S. Chiu, Y. Jaluria, Heat and mass transfer in continuous CVD reactors, Proceedings of the 11th IHTC, Vol. 5, Kyongjiu, Korea, 1998, pp. 187–192.

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