Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling-Reference-Cited by-同舟云学术

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Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling

Published:2018-09 Issue:9 Volume:35 Page:098101
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Mei Shu-Zhe,Wang Quan,Hao Mei-Lan,Xu Jian-Kai,Xiao Hong-Ling,Feng Chun,Jiang Li-Juan,Wang Xiao-Liang,Liu Feng-Qi,Xu Xian-Gang,Wang Zhan-Guo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/35/9/098101/pdf

Reference25 articles.

1. Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing

2. Different growth behaviors of GaN nanowires grown with Au catalyst and Au + Ga solid solution nano-droplets on Si(111) substrates by using MOCVD

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and optimization of MOCVD flow ratio based on machine learning and PSO algorithm;Journal of Crystal Growth;2022-07

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