The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor-Reference-Cited by-同舟云学术

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The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor

Published:2017-01 Issue: Volume:458 Page:140-148
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gkinis P.A.,Aviziotis I.G.,Koronaki E.D.,Gakis G.P.,Boudouvis A.G.

Funder

National Scholarship Foundation of Greece

Research Committee of NTUA

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy;Theodoropoulos;J. Cryst. Growth,2000

2. An overview of gallium nitride growth chemistry and its effect on reactor design: application to a planetary radial-flow CVD system;Parikh;J. Cryst. Growth,2006

3. A novel MOCVD reactor for growth of high-quality GaN-related LED layers;Hu;J. Cryst. Growth,2015

4. Influencing factors of GaN growth uniformity through orthogonal test analysis;Zhang;Appl. Therm. Eng.,2015

5. Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor;Tseng;J. Cryst. Growth,2015

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