InGaN heterostructures grown by molecular beam epitaxy:
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. B. Gil (Ed.), Group III nitride Semiconductor compounds, Clarendon Press, Oxford, 1998.
2. InGaN-based violet laser diodes
3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
4. Real-time control of the molecular beam epitaxy of nitrides
5. GaN evaporation in molecular-beam epitaxy environment
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