Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces-Reference-Cited by-同舟云学术

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Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

Published:2017-05-21 Issue:19 Volume:121 Page:195301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gruber J.¹²,Zhou X. W.¹,Jones R. E.¹,Lee S. R.³,Tucker G. J.²

Affiliation:

1. Mechanics of Materials Department, Sandia National Laboratories, Livermore, California 94550, USA

2. Materials Science and Engineering Department, Drexel University, Philadelphia, Pennsylvania 19104, USA

3. Advanced Materials Sciences Department, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983066

Reference86 articles.

1. Solid-state lighting—a benevolent technology

2. Solid-State Lighting: Toward Superior Illumination

3. The Promise and Challenge of Solid-State Lighting

4. Solid-state lighting

5. Illumination with solid state lighting technology

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