Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy
3. Surface diffusion and adatom stoichiometry in GaAs MBE studied by microprobe-RHEED/SEM MBE
4. Real-time observations of mesa shrinkage process in MBE of GaAs on (111)B patterned substrates and theoretical analysis
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1. Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells;Journal of Alloys and Compounds;2018-09
2. Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP;Optoelectronics Letters;2014-07
3. Surface-migration driving uniform amorphous shell on crystalline nanowire: the case of SiC/SiOx core–shell nanowires;CrystEngComm;2013
4. Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures;Journal of Applied Physics;2012-10-15
5. Effect of external field on bond energy and activation barrier for surface diffusion;Journal of Crystal Growth;2006-01
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