Real-time observations of mesa shrinkage process in MBE of GaAs on (111)B patterned substrates and theoretical analysis
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction
2. Molecular beam epitaxial growth of GaAs/AlAs and GaAs/AlGaAs quantum wells on sub-micron-period corrugated substrates
3. Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied byIn SituScanning Microprobe Reflection High-Energy Electron Diffraction
4. Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxy
5. Real-time observations of faceting and shrinkage processes of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates
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