Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique
2. Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
3. Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets
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5. The compositional non‐uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE
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3. Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate;Nanomaterials;2022-01-29
4. Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures;Applied Surface Science;2021-02
5. Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on ( 1 ¯ 1 ¯2 2 ¯) semipolar planes;Journal of Applied Physics;2020-12-07
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