Long wavelength InGaAs–InGaAlAs–InP lasers grown in MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength
2. 1.95-/spl mu/m strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers
3. InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 /spl mu/m
4. 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
5. Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-lnGaAsP quantum-well lasers
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1. Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate;Applied Physics Letters;2023-04-03
2. VCSELs Emitting in the 2–3 µm Wavelength Range;Mid-infrared Semiconductor Optoelectronics;2006
3. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
4. InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0μm;Journal of Crystal Growth;2003-04
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