An ab initio study of Se-reacted GaAs(0 0 1) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorption
2. Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopy
3. Physics and Simulation of Optoelectronic Devices IV, Proc. SPIE 2693;Spahn,1996
4. Reconstruction at the Ga2Se3/GaAs epitaxial interface
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ZnSe∕GaAs(001)heterostructures with defected interfaces: Structural, thermodynamic, and electronic properties;Physical Review B;2005-12-02
2. Surface, interface and bulk properties of GaAs(111)B treated by Se layers;Journal of Physics D: Applied Physics;2001-02-21
3. Surface and bulk properties of GaAs(001) treated by selenium layers;Surface Science;2000-11
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