Surface and bulk properties of GaAs(001) treated by selenium layers-Reference-Cited by-同舟云学术

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Surface and bulk properties of GaAs(001) treated by selenium layers

Published:2000-11 Issue:1-3 Volume:468 Page:109-121
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Feng P.X.,Riley J.D.,Leckey R.C.G.,Pigram P.J.,Hollering M.,Ley L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference17 articles.

1. Surface properties of passivated

2. Epitaxial Ga2Se3 layers grown on GaAs(100) using a heterovalent exchange reaction

3. Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions

4. Thermal and chemical stability of Se-passivated GaAs surfaces

5. An ab initio study of Se-reacted GaAs(0 0 1) surfaces

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1. Optimization of the Growth of the Van der Waals Materials Bi2Se3 and (Bi0.5In0.5)2Se3 by Molecular Beam Epitaxy;Crystal Growth & Design;2021-10-29

2. Surface Science Studies of Carbon Dioxide Chemistry;New and Future Developments in Catalysis;2013

3. Adsorption kinetics of small molecules on selenium foil;Surface Science;2011-05

4. Charge Transport and Electrochromism in Novel Nanocomposite Films of Poly(3,4-ethylenedioxythiophene)-Au Nanoparticles−CdSe Quantum Dots;The Journal of Physical Chemistry C;2010-08-06

5. Photoemission Studies of Surface, Interface and Bulk Properties of GaAs (001) Treated by Mg;Physica Scripta;2004-01-01

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