Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
2. Control of Zn(S, Se) composition using reflection high energy electron diffraction oscillations
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4. Blue‐green injection lasers containing pseudomorphic Zn1−xMgxSySe1−ycladding layers and operating up to 394 K
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2. Some physical investigations on ZnS1−xSex films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme;Journal of Crystal Growth;2010-01
3. Optical and structural properties of ZnSxSe1−xthin films deposited by thermal evaporation;The European Physical Journal Applied Physics;2009-07-04
4. Some electron probe X-ray microanalysis (EPMA)- and (BPES)-related physical investigations on ZnSSe thin-films growth composition-related kinetics;Canadian Journal of Physics;2009-06
5. Growth of polycrystalline ZnS0.5 Se0.5 films by screen printing technique;2007 International Workshop on Physics of Semiconductor Devices;2007-12
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