Affiliation:
1. Unité de Physique de Dispositifs à Semiconducteurs, Faculté des Sciences de Tunis, Tunisia.
Abstract
In this study, ZnSSe epilayers were grown on (111) ZnS sprayed thin films. The spectral analysis was carried out in the region from 400 to 1800 nm. Analyses of the transmittance and (or) reflectance spectra indicate a decrease of the band gap energy value Eg with selenization. As the selenization process changes the structure and property of prepared materials and therefore has a direct effect on their physical properties, one of the concerns of this paper is to investigate the depth-dependent composition changes as guides to monitoring the selenization kinetics. Photothermal, atomic force microscopy (AFM), and X-ray diffraction (XRD) investigations have also been carried out.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
16 articles.
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