Hetero-epitaxial growth of BexZn1−xSe on Si(0 0 1) and GaAs(0 0 1) substrates-Reference-Cited by-同舟云学术

Hetero-epitaxial growth of BexZn1−xSe on Si(0 0 1) and GaAs(0 0 1) substrates

Published:1998-02 Issue: Volume:184-185 Page:11-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Faurie J.P.,Bousquet V.,Brunet P.,Tournié E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001)

2. Effect of interface chemistry on the growth of ZnSe on the Si(100) surface

3. Atomic layer graphoepitaxy for single crystal heterostructures

4. Polar heterojunction interfaces

5. J.P. Faurie, S. Sivananthan, (1991) unpublished.

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