LiGaO2 single crystal as a lattice-matched substrate for hexagonal GaN thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. The crystal structure of LiGaO2
3. LiGaO$_{\bf 2}$ Single Crystals for a Substrate of Hexagonal GaN Thin Films
4. GaN Thin Film Growth on LiGaO$_{\bf 2}$ Substrate with a Multi-Domain Structure
5. Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β‐LiGaO2 substrates
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2. Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy;AIP Advances;2018-07
3. Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism;Physical Chemistry Chemical Physics;2017
4. Wurtzite-derived ternary I–III–O2 semiconductors;Science and Technology of Advanced Materials;2015-03-17
5. Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates;Journal of Electronic Materials;2015-03-06
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