Wurtzite-derived ternary I–III–O2 semiconductors-Reference-Cited by-同舟云学术

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Wurtzite-derived ternary I–III–O2 semiconductors

Published:2015-03-17 Issue:2 Volume:16 Page:024902
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Omata Takahisa¹,Nagatani Hiraku¹,Suzuki Issei¹,Kita Masao²

Affiliation:

1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2. Department of Mechanical Engineering, Toyama National College of Technology, 13 Hongo-machi, Toyama 939-8630, Japan

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1088/1468-6996/16/2/024902

Reference70 articles.

1. Transparent Conducting Oxides

2. Past achievements and future challenges in the development of optically transparent electrodes

3. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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