Electronic and optical properties of bulk Zn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si11.svg" display="inline" id="d1e819"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>VN<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si12.svg" display="inline" id="d1e827"><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:math> ternary nitride: First-principles investigation-Reference-Cited by-同舟云学术

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Electronic and optical properties of bulk Zn2VN3 ternary nitride: First-principles investigation

Published:2023-11 Issue: Volume:166 Page:107725
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hassine S.,Farkad O.^ORCID,Elfatouaki F.,Takassa R.,El Mouncharih A.,Choukri O.,Ouahdani A.,Ibnouelghazi E.A.,Abouelaoualim D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference83 articles.

1. Zn 2 SbN 3: Growth and characterization of a metastable photoactive semiconductor;Arca;Mater. Horiz.,2019

2. Structural and optoelectronic characterization of RF sputtered ZnSnN2;Lahourcade;Adv. Mater.,2013

3. Growth of single crystal non-polar (112 0) ZnSnN2 films on sapphire substrate;Le;Appl. Surf. Sci,2019

4. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes;Nakamura;Science,1998

5. High power applications for GaN-based devices;Trew;Solid-State Electron.,1997

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principle study of strontium intercalation in bilayer graphene;Pramana;2024-08-23

2. Penternary Wurtzitic Nitrides Li_1–xZn_xGe_2–xGa_xN₃: Powder Synthesis, Crystal Structure, and Potentiality as a Solar-Active Photocatalyst;Inorganic Chemistry;2024-06-14

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