MOVPE of GaInN heterostructures and quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes
3. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
4. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
5. Shortest wavelength semiconductor laser diode
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2. Band gap bowing and spectral width of Ga(1−x)InxN alloys for modelling light emitting diodes;Physica B: Condensed Matter;2022-01
3. Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting;ECS Journal of Solid State Science and Technology;2019-11-07
4. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N;Journal of Applied Physics;2016-07-07
5. MOVPE Growth of InxGa1−xN (x ∼ 0.4) and Fabrication of Homo-junction Solar Cells;Journal of Materials Science & Technology;2013-02
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