Band gap bowing and spectral width of Ga(1−x)InxN alloys for modelling light emitting diodes

Author:

Tantardini ChristianORCID,Gonze XavierORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference71 articles.

1. Crystal structure refinement of AlN and GaN;Schulz;Solid State Commun.,1977

2. Consistent structural properties for AlN, GaN, and InN;Wright;Phys. Rev. B,1995

3. Band structure and high-pressure phase transition in GaN, AlN, InN and BN;Gorczyca;Physica B,1993

4. Synthesis of a new ternary nitride semiconductor – Zn2VN3: A combinatorial exploration of the Zn-V-N phase space;Zhuk;ArXiv:Cond-Mat.Mtrl-Sci,2021

5. Ternary nitride materials: Fundamentals and emerging device applications;Greenaway;ArXiv:Cond-Mat.Mtrl-Sci,2020

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