Comparison between monomethyl hydrazine and ECR plasma activated nitrogen as a nitrogen source for CBE growth of GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. GaN, AlN, and InN: A review
2. Growth of III–V materials by metalorganic molecular‐beam epitaxy
3. Operation of a compact electron cyclotron resonance source for the growth of gallium nitride by molecular beam epitaxy (ECR-MBE)
4. High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns
5. Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source
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1. Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
2. Band gap widening of MBE grown InN layers by impurity incorporation;Journal of Crystal Growth;2005-05
3. Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2004-09-16
4. Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2004-01-09
5. Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films;Journal of The Electrochemical Society;2000
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