Author:
Nishida Toshio,Maeda Narihiko,Akasaka Tetsuya,Kobayashi Naoki
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. High‐repetition operation of a symmetric Mach–Zehnder all‐optical switch
3. Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiC
4. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
5. G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, M. Leonard, H.S. Kong, H. Dieringer, C. Carter, J. Edmond, Device Research Conf., 1997, IV-B-8.
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