Highly carbon-doped Ga0.47In0.53As contact layers grown by using carbontetrabromide in MBE on MOVPE 1.55μm GaInAsP/InP MQW laser structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
2. Carbon tetrabromide doping memory effect, incorporation efficiency, and InAlAs/InGaAs heterojunction bipolar transistor application
3. Carbon doping of InGaAs in solid-source molecular beam epitaxy using carbon tetrabromide
4. Heavily carbon-doped p-type GaAs and In0.53Ga0.47As grown by gas-source molecular beam epitaxy using carbon tetrabromide
5. Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of growth rate on surface morphology of heavily carbon-doped InGaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. In situ cleaning of air-exposed InGaAs using trisdimethylaminoarsine for CBE regrowth aimed at optical devices;Journal of Crystal Growth;1999-05
3. Thermal cleaning of air-exposed p-type InGaAs films and CBE regrowth of carbon-doped InGaAs layers for optical device applications;Journal of Crystal Growth;1999-04
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