In situ cleaning of air-exposed InGaAs using trisdimethylaminoarsine for CBE regrowth aimed at optical devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Low dark current waveguide photodiodes using hybrid MBE and MOCVD growth
2. Highly carbon-doped Ga0.47In0.53As contact layers grown by using carbontetrabromide in MBE on MOVPE 1.55μm GaInAsP/InP MQW laser structures
3. Investigation of molecular beam epitaxial In0.53Ga0.47As regrown on liquid phase epitaxial In0.53Ga0.47As/InP
4. Analysis of in-situ etched and regrown interfaces
5. Low-Temperature Surface Cleaning of GaAs Using Trisdimethylaminoarsine
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12
2. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As;Applied Physics Letters;2006-12-11
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