Growth and properties of InGaN nanoscale islands on GaN-Reference-Cited by-同舟云学术

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Growth and properties of InGaN nanoscale islands on GaN

Published:1998-06 Issue: Volume:189-190 Page:29-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Keller Stacia,Keller Bernd P,S. Minsky Milan,Bowers John E,Mishra Umesh K,DenBaars Steven P,Seifert Werner

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. The Blue Laser Diode;Nakamura,1997

2. Solid phase immiscibility in GaInN

3. Luminescences from localized states in InGaN epilayers

4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

5. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

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1. Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate;Materials Science in Semiconductor Processing;2023-03

2. Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Science in Semiconductor Processing;2022-05

3. Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Chemistry and Physics;2021-02

4. Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC;Semiconductor Science and Technology;2020-07-31

5. Evolution mechanism of InGaN quantum dots and their optical properties;Optical Materials;2020-01

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