Vapor phase epitaxy of Hg1−xCdxI2 on sapphire

Author:

Sochinskii N.V.,Reig C.,Muñoz V.,Alamo J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Vapor phase epitaxy of Hg1−xCdxI2 layers on CdTe substrates

2. Effect of α-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates

3. Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

4. Hg1−xCdxI2/CdTe heterostructures for nuclear radiation detectors: Effect of epitaxial growth on substrate properties

5. P. Capper, A.W. Brinkman, in: P. Capper (Ed.), Properties of Narrow Gap Cadmium-based Compounds, Growth of CdTe, CdZnTe and CdTe:Se by Bulk Methods, The Institution of Electrical Engineers, London, 1994, pp. 369–379, and references therein.

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers;Journal of Applied Physics;2008-03

2. Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07

3. Morphology and electrical properties of Pb1−xCdxTe/CdTe heterostructures;The European Physical Journal Applied Physics;2004-07

4. Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures;Journal of Crystal Growth;2004-02

5. Vapor growth of Hg1−xCdxI2 on glass using CdTe buffer;Thin Solid Films;2001-01

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