Characterization of ALN buffer layers on (0001)-sapphire substrates-Reference-Cited by-同舟云学术

Characterization of ALN buffer layers on (0001)-sapphire substrates

Published:1998-06 Issue: Volume:189-190 Page:282-286
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Le Vaillant Yves-Matthieu,Bisaro René,Olivier Jean,Durand Olivier,Duboz Jean-Yves,Ruffenach-Clur Sandra,Briot Olivier,Gil Bernard,Aulombard Roger-Louis

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Analysis of two‐step‐growth conditions for GaN on an AlN buffer layer

4. GaN Growth Using GaN Buffer Layer

5. The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

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