Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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3. Characterization of AlGaN/GaN HEMT Devices Grown by MBE
4. Influence of crystalline defects on transport properties of GaN grown by ammonia-molecular beam epitaxy and magnetron sputter epitaxy
5. Library
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