MBE growth of cubic AlyGa1−yN/GaN heterostructures—structural, vibrational and optical properties-Reference-Cited by-同舟云学术

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MBE growth of cubic AlyGa1−yN/GaN heterostructures—structural, vibrational and optical properties

Published:2001-09 Issue:3-4 Volume:230 Page:421-425
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

As D.J.,Frey T.,Bartels M.,Lischka K.,Goldhahn R.,Shokhovets S.,Tabata A.,Fernandez J.R.L.,Leite J.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Electroluminescence of a cubic GaN/GaAs (001) p–n junction

2. Cubic-phase GaN light-emitting diodes

3. Growth and applications of Group III-nitrides

4. Stability and band offsets of AlN/GaN heterostructures: impact on device performance

5. Ion-channeling studies of cubic GaN and InxGa1−xN on GaAs substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure and optical properties of Al and Mg co-doped GaN;Chinese Physics B;2013-11

2. Cathodoluminescence, High‐Resolution X‐Ray Diffraction and Transmission‐Electron‐Microscopy Investigations of Cubic AlGaN/GaN Quantum Wells;physica status solidi (c);2002-12-19

3. Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE;Journal of Crystal Growth;2002-06

4. Optical phonon modes and interband transitions in cubicAlxGa1−xNfilms;Physical Review B;2002-04-23

5. Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates;MRS Proceedings;2002

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