Ion-channeling studies of cubic GaN and InxGa1−xN on GaAs substrates-Reference-Cited by-同舟云学术

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Ion-channeling studies of cubic GaN and InxGa1−xN on GaAs substrates

Published:1999-09 Issue:4 Volume:155 Page:489-497
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Portmann J.,Haug C.,Brenn R.,Frey T.,Schöttker B.,As D.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

4. Initial stage of growth of in plasma-assisted molecular beam epitaxy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of temperature and flux on oxygen bubble formation in Li borosilicate glass under electron beam irradiation;Journal of Applied Physics;2006-04

2. Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates;physica status solidi (c);2003-08-05

3. Light emission from cubic InGaN nanostructures;Microelectronics Journal;2003-05

4. n- and p-Type Doping of Cubic GaN;Defect and Diffusion Forum;2002-07

5. MBE growth of cubic AlyGa1−yN/GaN heterostructures—structural, vibrational and optical properties;Journal of Crystal Growth;2001-09

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