Electronic structure and optical properties of Al and Mg co-doped GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/117103/pdf
Reference32 articles.
1. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
2. Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency
3. Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
4. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
5. Quantum efficiency of GaN photocathode under different illumination
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