HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system

Author:

Ohshita Yoshio,Ogura Atsushi,Hoshino Asako,Hiiro Shigeki,Machida Hideaki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

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4. J.C. Lee, W-Qi, R. Nie, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan, Proceedings of MRS High-k Gate Dielectric Workshop, 2000, p. 23.

5. S.A. Campbell, R. Smith, Hoilien, B. He, W.L. Gladfelter, Proceedings of MRS High-k Gate Dielectric Workshop, 2000, p. 9.

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