Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for highly effective planarization of 4H-SiC
Author:
Funder
MEXT
JST
Publisher
Elsevier BV
Subject
Industrial and Manufacturing Engineering,Mechanical Engineering
Reference9 articles.
1. Mechanochemical Polishing of Silicon Carbide Crystal with Chromium (III) Oxide Abrasive;Kikuchi;Journal of the American Ceramic Society,1992
2. Chemomechanical Polishing of Silicon Carbide;Zhou;Journal of the Electrochemical Society,1997
3. Atomic-Scale Flattening of SiC Surfaces by Electroless Chemical Etching in HF Solution with Pt Catalyst;Arima;Applied Physics Letters,2007
4. Electro-Chemical Mechanical Polishing of Silicon Carbide;Li;Journal of Electronic Materials,2004
5. Plasma Assisted Polishing of Single Crystal SiC for Obtaining Atomically Flat Strain-Free Surface;Yamamura;CIRP Annals – Manufacturing Technology,2011
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