Photoelectrochemical mechanical polishing method for n-type gallium nitride-Reference-Cited by-同舟云学术

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Photoelectrochemical mechanical polishing method for n-type gallium nitride

Published:2019 Issue:1 Volume:68 Page:205-208
ISSN:0007-8506
Container-title:CIRP Annals
language:en
Short-container-title:CIRP Annals

Author:

Dong Zhigang,Ou Liwei,Kang Renke,Hu Huiqin,Zhang Bi,Guo Dongming,Shi Kang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering

Reference12 articles.

1. Damage-free Highly Efficient Polishing of Single-crystal Diamond Wafer By Plasma-assisted Polishing;Yamamura;Annals CIRP,2018

2. Optimization of the Plasma Oxidation and Abrasive Polishing Processes in Plasma-assisted Polishing for Highly Effective Planarization of 4H-SiC;Deng;Annals CIRP,2014

3. Plasma-assisted Polishing of Gallium Nitride to Obtain a Pit-Free and Atomically Flat Surface;Deng;Annals of the CIRP,2015

4. Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica;Aida;Journal of the Electrochemical Society,2011

5. Effect of Photocatalytic Oxidation Technology on GaN CMP;Wang;Applied Surface Science,2016

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5. Electrolyte Effect on Photoetching of Gallium Nitride;Nanomanufacturing and Metrology;2024-03-06

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