A nanoscale AlGaN/GaN HEMT on BGO substrate with recessed T gate for high frequency applications
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference19 articles.
1. DC Characterization and High-Frequency Performance Analysis of a GaN/AlGaN HET on a β-Ga2O3 Substrate;Anju;IETE J. Res.,2021
2. Design optimization of high-frequency AlGaN/GaN HEMT on BGO substrates;Anju;Appl. Phys. A,2021
3. A review of GaN on SiC high electron-mobility power transistors and MMICs;Pengelly;IEEE Trans. Microw. Theory Technol.,2012
4. W-band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology;Shaobing;IEEE Trans. Electr. Dev.,2016
5. Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmax of 454/444GHz;Yan;IEEE Electr. Dev. Lett.,2015
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1. Design and control of a new power conditioning system based on superconducting magnetic energy storage;Journal of Energy Storage;2022-07
2. Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer;Silicon;2022-01-07
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