Radical low-slung influence 12-Bit SAR ADC

Author:

Subha T.D.,Jo Lijha J. Sworna,Gokulraj ,Subash T.D.

Publisher

Elsevier BV

Subject

General Medicine

Reference27 articles.

1. LCNT-an approach to minimize leakage power in CMOS integrated circuits;Lorenzo;Microsystem Technologies,2017

2. V. Bendre and A. K. Kureshi,” An Overview of Various Leakage Power Reduction Techniques in Deep Submicron Technologies,” International Conference on Computing Communication Control and Automation, 2015.

3. Yung-Hui Chung, Meng-Hsuan Wu, and Hung-Sung Li, “A 12-bit 8.47-fJ/Conversion-Step Capacitor Swapping SAR ADC in 110-nm CMOS,” IEEE Trans. Circuits and Syst. I, Reg. Papers, vol. 62, no. 1, Jan. 2015.

4. A Comprehensive Study on Power Reduction Techniques in Deep Submicron Technologies;Bharathi;International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering,2015

5. V. K. Sharma, S. Patel and M. Pattanaik,” High Performance Process Variations Aware Technique for Subthreshold 8T-SRAM Cell,” Wireless Pers. Commun., vol. 78, 57, 2014.

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