Thermoelectric transport and microstructural study of Cu doped Mg2Si0.4Sn0.6
Author:
Funder
National Taiwan University
LFA
Publisher
Elsevier BV
Subject
General Medicine
Reference14 articles.
1. Microstructure and mechanical stability of Bi doped Mg2Si0.4Sn0.6 thermoelectric material
2. Recent progress in magnesium-based thermoelectric materials
3. Theoretical study of thermoelectric properties of p-type Mg2 Si1− Sn solid solutions doped with Ga
4. Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure
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1. A Study on the Effect of 50 keV Nitrogen Ion Implantation in Mg2Si Thin Films;Silicon;2023-05-31
2. Thermoelectric properties of p-type Mg2Si0.3Sn0.7 doped with silver and gallium;Journal of Alloys and Compounds;2023-05
3. Effect of Sb/Bi atom substitution site on electronic transport properties of Mg<sub>2</sub>Si<sub>0.375</sub>Sn<sub>0.625</sub> alloy;Acta Physica Sinica;2022
4. Effect of Different Sb/Bi Substituted Sites on Electronic Transport Properties of Mg<sub>2</sub>Si<sub>0.375</sub>Sn<sub>0.625</sub> Alloy;Acta Physica Sinica;2022
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