A Study on the Effect of 50 keV Nitrogen Ion Implantation in Mg2Si Thin Films
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02521-4.pdf
Reference46 articles.
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2. Mamindla R, Niranjan MK (2020) Surface electronic structure, relaxations and thermodynamic energies of (100), (110) and (111) surfaces of Mg2Si: A first-principles theoretical study. Surf Sci 691(July 2019):121506. https://doi.org/10.1016/j.susc.2019.121506
3. Langouche G, Mahan JE, Becker JP (1996) “Semiconducting Mg 2 Si thin films prepared by molecular-beam epitaxy,” vol. 54, no. 23, pp. 965–971
4. Vantomme A et al (2014) “Thin film growth of semiconducting Mg 2 Si by codeposition Thin film growth of semiconducting Mg 2 Si by codeposition,” vol. 1086, no. 1997, pp. 10–13, https://doi.org/10.1063/1.118492
5. Vantomme A, Langouche G, Mahan JE, J. P. Becker (2000) “Growth mechanism and optical properties of semiconducting Mg 2 Si thin films,” vol. 50, pp. 237–242
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